Nanoimprint lithography (NIL) has been embraced by a number of users as a practical and cost effective means for patterning surfaces and an extensive body of work compiled thus far on NIL has shown its usefulness in producing nanoscale devices and topological platforms for various surface chemistries.[1-3] While thermal-NIL and UV-NIL are effective, they tend to require special apparatus to apply heat and/or pressure during the imprint,[4] although the cost of this equipment is a fraction of the expense of a photolithography fabrication facility. In many NIL techniques the ability to pattern large areas is hindered by the non-conformal contact of two rigid surfaces. Reliable patterns over large areas with even residual layers can now be achieved by techniques such as Step and Flash imprint lithography (S-FIL), but sophisticated equipment and expensive quartz molds are required.[5] Accordingly, barriers remain for users who wish to utilize NIL but are limited in resources or lack access to state-of-the-art fabrication facilities.
References:
(1) Beinhoff, M.; Appapillai, A. T.; Underwood, L. D.; Frommer, J. E.; Carter, K. R. " Patterned Polyfluorene Surfaces by Functionalization of Nanoimprinted Polymeric Features";Langmuir, 2006, 22, 2411-2414.
(2) Guo, L. J. " Recent progress in nanoimprint technology and its applications";Journal of Physics D-Applied Physics, 2004, 37, R123-R141.
(3) von Werne, T. A.; Germack, D. S.; Hagberg, E. C.; Sheares, V. V.; Hawker, C. J.; Carter, K. R. " A versatile method for tuning the chemistry and size of nanoscopic features by living free radical polymerization";Journal Of The American Chemical Society ,2003, 125, 3831-3838.
(4) Zankovych, S.; Hoffmann, T.; Seekamp, J.; Bruch, J. U.; Torres, C. M. S. " Nanoimprint lithography: challenges and prospects";Nanotechnology, 2001, 12, 91-95.
(5) Bailey, T.; Choi, B. J.; Colburn, M.; Meissl, M.; Shaya, S.; Ekerdt, J. G.; Sreenivasan, S. V.; Willson, C. G. " Step and flash imprint lithography: Template surface treatment and defect analysis";J. Vac. Sci. Technol., B.2000, 18, 3572.